IEEE Transactions on Nuclear Science · 2012 · 42 citations · 27 references
Natural SciencesMaterials EngineeringMaterials ScienceInterface ScienceRadiation PhysicsSurface ScienceDefect ModelingDefects In Electronic MaterialsInterface EngineeringInterface ModelingRadiation Damage In MaterialsRadiation Interaction With MatterDefect InteractionsDose-rate EffectsInterface Trap DensityInterface Trap ModelingInterface TrapsPhysics-based SimulationRadiation EffectsTemperature Dependence Of Radiation Damage
Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface play a significant role in determining interface-trap buildup by trapping protons as proton concentration and temperature increase.
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