Electrochemical capacitance-voltage depth profiling of nanometer-scale layers fabricated by Ga+ focused ion beam implantation into silicon

Abstract

The electrochemical capacitance-voltage (ECV) profiling technique is employed to measure the active carrier concentration in nanoscale layers fabricated by focused ion beam (FIB) implantation of 3 to 10 keV Ga+ ions into crystalline Si. The carrier concentration profiles obtained by ECV indicate the ability of this technique to probe depths as shallow as 2–3 nm and with a nanometer-scale depth resolution. The carrier concentration obtained by ECV matches well with the Ga atomic concentration profile detected by secondary-ion mass spectroscopy, but is almost an order of magnitude higher than that provided by the spreading resistance profile technique.