Proceedings of the IEEE · 2010 · 95 citations · 23 references
EngineeringElectrical EngineeringMaterials ScienceLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDynamic Power ReductionIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsLow-power Circuit DesignPower ConsumptionPower Consumption OptimizationSilicon-on-insulator ProcessingSilicon-on-insulator TechnologySubthreshold OperationTransistor Sizing For Subthreshold OperationUltra-low-voltage Circuit Design
Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation at 0.3 V may achieve a 97% reduction in switching energy compared to conventional transistors. The process technology described in this article takes advantage of the capacitance and performance benefits of thin-body silicon-on-insulator devices, combined with a workfunction engineered mid-gap metal gate.
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