Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 21 citations · 13 references
SemiconductorsSemiconductor TechnologyIi-vi SemiconductorBand LineupEngineeringPhysicsOptical PropertiesApplied PhysicsHigh-quality Ga1−xinxnyp1−y/gaasBand Gap ReductionMolecular Beam EpitaxyOptoelectronicsCompound SemiconductorGa1−xinxnyp1−y/gaas Heterostructure
We report gas-source molecular beam epitaxy of high-quality Ga1−xInxNyP1−y/GaAs heterostructures grown on a GaAs (100) substrate. Bulk Ga1−xInxNyP1−y, as well as Ga1−xInxNyP1−y/GaAs, quantum well (QW) samples were grown and characterized by a high-resolution x-ray rocking curve and photoluminescence (PL). With nitrogen incorporation, the PL peak redshifts, indicating band gap reduction. Rapid thermal annealing for 10 s in a 100% N2 ambient with 700 °C temperature improves the Ga0.46In0.54N0.005P0.995PL intensity by a factor of 10 and reduces the linewidth to two fifths. We use both bulk and QW PL experimental data to determine band lineup for Ga1−xInxNyP1−y/GaAs heterostructure. Most of the band reduction is attributed from the conduction band with nitrogen incorporation.
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Band Anticrossing in GaInNAs Alloys
W. Shan, W. Walukiewicz, Joel W. Ager et al. · Physical Review Letters · 1999 · 1.6K citations
Materials Science, Materials Engineering, Conduction Band +15
29.5%-efficient GaInP/GaAs tandem solar cells
K. A. Bertness, Sarah Kurtz, Daniel J. Friedman et al. · Applied Physics Letters · 1994 · 311 citations · Full text