Electron trapping by radiation-induced charge in MOS devices

Abstract

Electron trapping by positive charge centers induced in MOS structures by exposure to x rays has been studied by the avalanche injection technique. Five electron traps with cross sections ranging from 10−13 to 10−19 cm2 have been measured. Two of these account for the majority of positive charge in the SiO2 and the remaining three are associated with positive or neutral centers in the oxide.