Numerical Evaluation of 10-kV Clustered Insulated Gate Bipolar Transistor in 4H-SiC

Abstract

This paper provides an in-depth numerical analysis of a 10-kV trench clustered insulated gate bipolar transistor (IGBT) (TCIGBT) in 4H-SiC. The results show that the TCIGBT in 4H-SiC can lead to a 60% improvement in the Vce(sat)-Eoff tradeoff as compared to an equivalent IGBT. The differential on-resistance of TCIGBT is obtained to be 20 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at a gate voltage of -20 V. The results also show that the TCIGBT can outperform its IGBT counterpart by providing 40% lower saturation current density, leading to an increased short-circuit endurance time.