Investigation of mass transport during PVT growth of SiC by 13C labeling of source material

Investigation of growth processes of ingots of silicon carbide single crystals

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1978 · 563 citations

Materials Science, Materials Engineering, Engineering +7

Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT

M. Selder, L. Kadinski, Yu.N. Makarov et al. · Journal of Crystal Growth · 2000 · 76 citations

Engineering, Material Simulation, Applied Physics +8

SiC-bulk growth by physical-vapor transport and its global modelling

Dieter Hofmann, R. Eckstein, M. Kölbl et al. · Journal of Crystal Growth · 1997 · 68 citations

Engineering, Physics, Applied Physics +6

State of the art in the modelling of SiC sublimation growth

M. Pons, M. M. Anikin, K Chourou et al. · Materials Science and Engineering B · 1999 · 57 citations

Engineering, Applied Physics, Sic Sublimation Growth +5

In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

Peter J. Wellmann, Matthias Bickermann, Dieter Hofmann et al. · Journal of Crystal Growth · 2000 · 51 citations

X-ray Spectroscopy, Engineering, Physics +11