In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

Investigation of growth processes of ingots of silicon carbide single crystals

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1978 · 563 citations

Materials Science, Materials Engineering, Engineering +7

Single crystal growth of SiC substrate material for blue light emitting diodes

G. Ziegler, P. Lanig, D. Theis et al. · IEEE Transactions on Electron Devices · 1983 · 196 citations

Materials Science, Semiconductors, Electrical Engineering +15

Progress in SiC: from material growth to commercial device development

C.H. Carter, V. F. Tsvetkov, R Glass et al. · Materials Science and Engineering B · 1999 · 126 citations

Materials Engineering, Materials Science, Engineering +4

Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals

M. Pons, E. Blanquet, Jean-Marc Dedulle et al. · Journal of The Electrochemical Society · 1996 · 74 citations

Engineering, Mechanical Engineering, Silicon Carbide Crystals +19

SiC-bulk growth by physical-vapor transport and its global modelling

Dieter Hofmann, R. Eckstein, M. Kölbl et al. · Journal of Crystal Growth · 1997 · 68 citations

Engineering, Physics, Applied Physics +6