Concepedia

SiC-bulk growth by physical-vapor transport and its global modelling

Dieter Hofmann, R. Eckstein, M. Kölbl, Yuri Makarov, St.G. Müller, Erwin Schmitt, A. Winnacker, Roland Rupp, René Stein, J. Völkl

Journal of Crystal Growth · 1997 · 69 citations · 4 references

DOI

Concepts

References

4

Investigation of growth processes of ingots of silicon carbide single crystals

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1978 · 570 citations

, , +14

Single crystal growth of SiC substrate material for blue light emitting diodes

G. Ziegler, P. Lanig, D. Theis et al. · IEEE Transactions on Electron Devices · 1983 · 198 citations

, , +17

On the sublimation growth of SiC bulk crystals: development of a numerical process model

Dieter Hofmann, Marcus Heinze, A. Winnacker et al. · Journal of Crystal Growth · 1995 · 71 citations

, , +13

First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor

Roland Rupp, P. Lanig, J. Völkl et al. · Journal of Crystal Growth · 1995 · 38 citations

, , +14