M. Kölbl

Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation

Dieter Hofmann, Matthias Bickermann, R. Eckstein et al. · Journal of Crystal Growth · 1999 · 71 citations

Materials Engineering, Materials Science, Engineering +9

SiC-bulk growth by physical-vapor transport and its global modelling

Dieter Hofmann, R. Eckstein, M. Kölbl et al. · Journal of Crystal Growth · 1997 · 68 citations

Engineering, Physics, Applied Physics +6

Analysis on defect generation during the SiC bulk growth process

Dieter Hofmann, Erwin Schmitt, Matthias Bickermann et al. · Materials Science and Engineering B · 1999 · 63 citations

Materials Engineering, Electrical Engineering, Defect Generation +7

Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification

S. Müller, Robert Eckstein, Dieter Hofmann et al. · Materials science forum · 1998 · 18 citations

Materials Engineering, Mass Transport, Experimental Verification +7

Bulk Growth Of Silicon Carbide Crystals: Analysis Of Growth Rate And Crystal Quality

Dieter Hofmann, R. Eckstein, L. Kadinski et al. · MRS Proceedings · 1997 · 11 citations

Materials Science, Epitaxial Growth, Engineering +9