M. Kölbl

Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation

Dieter Hofmann, Matthias Bickermann, R. Eckstein et al. · Journal of Crystal Growth · 1999 · 72 citations

Natural Sciences, Materials Engineering, Materials Science +17

SiC-bulk growth by physical-vapor transport and its global modelling

Dieter Hofmann, R. Eckstein, M. Kölbl et al. · Journal of Crystal Growth · 1997 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +16

Analysis on defect generation during the SiC bulk growth process

Dieter Hofmann, Erwin Schmitt, Matthias Bickermann et al. · Materials Science and Engineering B · 1999 · 67 citations

Natural Sciences, Materials Engineering, Materials Science +12

Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification

S. Müller, Robert Eckstein, Dieter Hofmann et al. · Materials science forum · 1998 · 18 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Bulk Growth Of Silicon Carbide Crystals: Analysis Of Growth Rate And Crystal Quality

Dieter Hofmann, R. Eckstein, L. Kadinski et al. · MRS Proceedings · 1997 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +17