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Bulk Growth Of Silicon Carbide Crystals: Analysis Of Growth Rate And Crystal Quality

DOI

11

Citations

4

References

1997

Year

Dieter Hofmann, R. Eckstein, L. Kadinski, M. Kölbl, Marcus Müller, St.G. Müller, Erwin Schmitt, Amd-Dietrich Weber, A. Winnacker
MRS Proceedings

References

YearCitations

Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum

Yu. A. Vodakov, E. N. Mokhov, M.G. Ramm,

Kristall und Technik

1979

112

On the sublimation growth of SiC bulk crystals: development of a numerical process model

Dieter Hofmann, Marcus Heinze, A. Winnacker,

Journal of Crystal Growth

1995

71

SiC-bulk growth by physical-vapor transport and its global modelling

Dieter Hofmann, R. Eckstein, M. Kölbl,

Journal of Crystal Growth

1997

68

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

R. Eckstein, Dieter Hofmann, Yu.N. Makarov,

MRS Proceedings

1996

12

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