Concepedia

Bulk Growth Of Silicon Carbide Crystals: Analysis Of Growth Rate And Crystal Quality

Dieter Hofmann, R. Eckstein, L. Kadinski, M. Kölbl, Marcus Müller, St.G. Müller, Erwin Schmitt, Amd-Dietrich Weber, A. Winnacker

MRS Proceedings · 1997 · 11 citations · 4 references

DOI

Concepts

References

4

Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum

Yu. A. Vodakov, E. N. Mokhov, M.G. Ramm et al. · Kristall und Technik · 1979 · 112 citations

On the sublimation growth of SiC bulk crystals: development of a numerical process model

Dieter Hofmann, Marcus Heinze, A. Winnacker et al. · Journal of Crystal Growth · 1995 · 71 citations

, , +11

SiC-bulk growth by physical-vapor transport and its global modelling

Dieter Hofmann, R. Eckstein, M. Kölbl et al. · Journal of Crystal Growth · 1997 · 68 citations

, , +6

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

R. Eckstein, Dieter Hofmann, Yu.N. Makarov et al. · MRS Proceedings · 1996 · 12 citations

, , +7