Growth of bulk SiGe single crystals by liquid phase diffusion

Totally relaxed Ge<i>x</i>Si1−<i>x</i> layers with low threading dislocation densities grown on Si substrates

Eugene A. Fitzgerald, Y. H. Xie, M. L. Green et al. · Applied Physics Letters · 1991 · 688 citations

Engineering, Materials Engineering, Materials Science +16

Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 532 citations

Engineering, Materials Science, Physics +17

The maximum possible conversion efficiency of silicon-germanium thermoelectric generators

Glen A. Slack, Moayyed A. Hussain · Journal of Applied Physics · 1991 · 380 citations

Engineering, Materials Engineering, Materials Science +17

Extremely high electron mobility in Si/Ge<i>x</i>Si1−<i>x</i> structures grown by molecular beam epitaxy

Y. J. Mii, Y. H. Xie, Eugene A. Fitzgerald et al. · Applied Physics Letters · 1991 · 261 citations

Engineering, Materials Science, Physics +17

Some Properties of Germanium-Silicon Alloys

Everett R. Johnson, Schuyler M. Christian · Physical Review · 1954 · 160 citations

Natural Sciences, Materials Engineering, Materials Science +9