Accurate two sections model for MOS transistor in saturation

Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors

H.C. Pao, C. T. Sah · Solid-State Electronics · 1966 · 611 citations

Engineering, Electrical Engineering, Materials Science +12

An accurate large-signal MOS transistor model for use in computer-aided design

G. Merckel, Jean-Pierre Borel, Nicolae Cupcea · IEEE Transactions on Electron Devices · 1972 · 145 citations

Engineering, Electrical Engineering, Circuit Theory +16

The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors

C. T. Sah, H.C. Pao · IEEE Transactions on Electron Devices · 1966 · 138 citations

Engineering, Electrical Engineering, Materials Science +17

Conductance of MOS transistors in saturation

D. Frohman‐Bentchkowsky, Andrew S. Grove · IEEE Transactions on Electron Devices · 1969 · 99 citations

Engineering, Electrical Engineering, Materials Science +17

Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)

V.G.K. Reddi, C. T. Sah · IEEE Transactions on Electron Devices · 1965 · 81 citations

Engineering, Electrical Engineering, Microelectronics +12