Characteristics of TiN gate metal-oxide-semiconductor field effect transistors

Abstract

We have investigated the compatibility of TiN gate electrodes with standard metal-oxide-semiconductor (MOS) processing. Measurements were performed on MOS capacitors to determine the metal work function, flat-band voltage, total interface charge density, mobile oxide charge density, oxide leakage current, and breakdown field. The measurement of the threshold voltage as a function of back bias on TiN gate MOS field effect transistors has revealed device characteristics which compare well with those of standard polysilicon gate devices.