Concepedia

GaAs-oxide removal using an electron cyclotron resonance hydrogen plasma

Zhaoming Lu, Michael Schmidt, D. Chen, Richard M. Osgood, W. M. Holber, D. V. Podlesnik, John Forster

Applied Physics Letters · 1991 · 54 citations · 21 references

DOI

Concepts

Abstract

The surface chemistry of GaAs-oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x-ray photoelectron spectroscopy. It is found that As oxide is efficiently removed at room temperature, and heating expedites the removal of Ga oxide. Band bending changes during ECR hydrogen-plasma oxide reduction are also discussed.

References

21

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E. A. Kraut, R. W. Grant, J. R. Waldrop et al. · Physical review. B, Condensed matter · 1983 · 503 citations

, , +17

Electron cyclotron resonance microwave discharges for etching and thin-film deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 361 citations

, , +17

ELECTRON CYCLOTRON RESONANCE MICROWAVE DISCHARGES FOR ETCHING AND THIN?FILM DEPOSITION

V Asmussen · 1989 · 300 citations

, , +12

Study of the x-ray photoelectron spectrum of tungsten—tungsten oxide as a function of thickness of the surface oxide layer

Thomas A. Carlson, G. E. McGuire · Journal of Electron Spectroscopy and Related Phenomena · 1972 · 259 citations

, , +12

Donor neutralization in GaAs(Si) by atomic hydrogen

J. Chevallier, W. C. Dautremont–Smith, C. W. Tu et al. · Applied Physics Letters · 1985 · 234 citations

, , +17