Dose radiation effects in FinFETs

Sub 50-nm FinFET: PMOS

Xuejue Huang, Wen‐Chin Lee, C. Kuo et al. · 2003 · 365 citations

Low-power Electronics, Electrical Engineering, Quasi-planar Nature +11

Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's

H.‐S. Philip Wong, Marvin H. White, T.J. Krutsick et al. · Solid-State Electronics · 1987 · 315 citations

Device Modeling, Electrical Engineering, Transconductance Degradation +8

Modeling of ultrathin double-gate nMOS/SOI transistors

P. Francis, A. Terao, Denis Flandre et al. · IEEE Transactions on Electron Devices · 1994 · 156 citations

Device Modeling, Semiconductors, Electrical Engineering +13

Threshold voltage and subthreshold slope of multiple-gate SOI MOSFETs

J.-P. Colinge, J.W. Park, Weize Xiong · IEEE Electron Device Letters · 2003 · 80 citations

Device Modeling, Electrical Engineering, Engineering +11

From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena

J.L. Leray, E. Dupont-Nivet, O. Musseau et al. · IEEE Transactions on Nuclear Science · 1988 · 71 citations

Engineering, Vlsi Design, Dose Rate +17