Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's

Self-Consistent Results for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Si Inversion Layers

Frank Stern · Physical review. B, Solid state · 1972 · 1.2K citations

Engineering, Materials Engineering, Materials Science +17

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Shiyu Sun, J.D. Plummer · IEEE Transactions on Electron Devices · 1980 · 684 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors

H.C. Pao, C. T. Sah · Solid-State Electronics · 1966 · 611 citations

Engineering, Electrical Engineering, Materials Science +12

A charge-sheet model of the MOSFET

J.R. Brews · Solid-State Electronics · 1978 · 555 citations

Engineering, Computer Engineering, Electrical Engineering +12

A simple theory to predict the threshold voltage of short-channel IGFET's

L.D. Yau · Solid-State Electronics · 1974 · 398 citations

Engineering, Electrical Engineering, Electronic Materials +15