Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors

Temperature quenching of photoluminescence intensities in undoped and doped GaN

M. Leroux, N. Grandjean, B. Beaumont et al. · Journal of Applied Physics · 1999 · 511 citations · Full text

Engineering, Materials Engineering, Materials Science +14

Optical Properties of Substitutional Donors in ZnSe

J. L. Merz, Hiroshi Kukimoto, K. Nassau et al. · Physical review. B, Solid state · 1972 · 301 citations

Natural Sciences, Materials Science, Physics +15

From visible to white light emission by GaN quantum dots on Si(111) substrate

B. Damilano, N. Grandjean, F. Sèmond et al. · Applied Physics Letters · 1999 · 284 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

K. Kornitzer, Tamara Ebner, K. Thonke et al. · Physical review. B, Condensed matter · 1999 · 228 citations

Natural Sciences, Materials Engineering, Materials Science +17

Donor bound-exciton excited states in zinc selenide

P. J. Dean, D C Herbert, C. Werkhoven et al. · Physical review. B, Condensed matter · 1981 · 216 citations

Natural Sciences, Chemistry, Materials Science +15