C. Werkhoven

Donor bound-exciton excited states in zinc selenide

P. J. Dean, D C Herbert, C. Werkhoven et al. · Physical review. B, Condensed matter · 1981 · 215 citations

Donor Bound-exciton, Localized Excited State, Engineering +16

Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

Yudong Kim, G. Gebara, M. B. Freiler et al. · 2002 · 61 citations

Zro/sub 2//Poly-si Transistors, Electrical Engineering, Zro/sub 2/ +13

Spectroscopic studies of ZnSe grown by liquid phase epitaxy

Brian Fitzpatrick, C. Werkhoven, Thomas McGee et al. · IEEE Transactions on Electron Devices · 1981 · 47 citations

Modern Lpe Techniques, Ii-vi Semiconductor, Engineering +15

Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

Sandwip K. Dey, Jaydeb Goswami, Diefeng Gu et al. · Applied Physics Letters · 2004 · 46 citations

Engineering, Electrode-electrolyte Interface, Solid-state Chemistry +19

Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry

Sunanda Dey, Chenyu Wang, Derek Tang et al. · Journal of Applied Physics · 2003 · 45 citations

Engineering, Native Oxide, Nm Layer +18