G. Gebara

Improvement of FinFET Electrical Characteristics by Hydrogen Annealing

Wei Xiong, G. Gebara, Jannat Ara Zaman et al. · IEEE Electron Device Letters · 2004 · 87 citations

Electrical Engineering, Engineering, Hydrogen Annealing +10

Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility

Wenjing Xiong, C. Rinn Cleavelin, Puneet Kohli et al. · IEEE Electron Device Letters · 2006 · 69 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

Xin Sun, Qiang Lü, Victor Moroz et al. · IEEE Electron Device Letters · 2008 · 68 citations

3D Ic Architecture, Electrical Engineering, Cmos Scaling +12

Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

Yudong Kim, G. Gebara, M. B. Freiler et al. · 2002 · 61 citations

Zro/sub 2//Poly-si Transistors, Electrical Engineering, Zro/sub 2/ +13

Body Effect in Tri- and Pi-Gate SOI MOSFETs

J. Frei, Chad Johns, Aitor Vázquez et al. · IEEE Electron Device Letters · 2004 · 51 citations

Device Modeling, Electrical Engineering, Engineering +10