Concepedia

Author

G. Gebara

University of California, Berkeley

Also Known As

G. Gebara, Gabriel Gebara

14

Publications

404

Citations

8

H-Index

22

Concepts

All Affiliations

University of California, BerkeleyTexas Instruments (United States)Infineon Technologies (Germany)Synopsys (United States)
GG

About

G. Gebara is an author at University of California, Berkeley specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

8

8

400

2

Electrical Engineering

8

8

400

3

Applied Physics

7

7

332

4

Computer Engineering

3

3

118

5

Materials Engineering

1

1

14

G. Gebara

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8

Publications

400

Citations

8

H-Index

YearCitations

Improvement of FinFET Electrical Characteristics by Hydrogen Annealing

Wei Xiong, G. Gebara, Jannat Ara Zaman,

IEEE Electron Device Letters

2004

87

Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility

Wenjing Xiong, C. Rinn Cleavelin, Puneet Kohli,

IEEE Electron Device Letters

2006

69

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

Xin Sun, Qiang Lü, Victor Moroz,

IEEE Electron Device Letters

2008

68

Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

Yudong Kim, G. Gebara, M. B. Freiler,

2002

61

Body Effect in Tri- and Pi-Gate SOI MOSFETs

J. Frei, Chad Johns, Aitor Vázquez,

IEEE Electron Device Letters

2004

51

Band-Engineered Low PMOS V<inf>T</inf> with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

H. R. Harris, Pankaj Kalra, Prashant Majhi,

2007

36

Integration of high-k gate stack systems into planar CMOS process flows

Howard R. Huff, Avinash Kumar Ágarwal, Y. Kim,

2002

14

Fin Thickness Asymmetry Effects in Multiple-Gate SOI FETs (MuGFETs)

T. Schulz, Wenjing Xiong, C. Rinn Cleavelin,

2006

14

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