M. Teisseire

GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates

M. Asif Khan, J. Yang, W. Knap et al. · Applied Physics Letters · 2000 · 103 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates

J.‐M. Chauveau, M. Teisseire, H. Kim‐Chauveau et al. · Applied Physics Letters · 2010 · 71 citations

Materials Science, Photoluminescence, Engineering +15

Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells

Luc Beaur, T. Bretagnon, B. Gil et al. · Physical Review B · 2011 · 68 citations

Semiconductors, Quantum Science, Ii-vi Semiconductor +15

Non-polar<i>a</i>-plane ZnMgO1/ZnO quantum wells grown by molecular beam epitaxy

J.‐M. Chauveau, M. Laügt, P. Vennéguès et al. · Semiconductor Science and Technology · 2008 · 64 citations

Semiconductors, Materials Science, Stark Effect +14

Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy

Dimitri Tainoff, M. Al-Khalfioui, C. Deparis et al. · Applied Physics Letters · 2011 · 51 citations

Materials Engineering, Oxide Heterostructures, Materials Science +14