M. Teisseire - Concepedia

Author

M. Teisseire

Centre National de la Recherche Scientifique

Also Known As

Desenclos, Jean-Claude, M Teisseire, M. Teisseire, Maguelonne Teisseire, Teisseire, M., Teisseire, Maguelonne

Publications

821

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Université Côte d'Azur Université de Montpellier Institute of High Pressure Physics

About

M. Teisseire is an author at Centre National de la Recherche Scientifique specializing in engineering, physics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	19	695
2	Applied Physics	13	16	640
3	Natural Sciences	4	4	122
4	Management	1	1	15
5	Chemical Engineering	1	1	27

M. Teisseire

Publications

719

Citations

H-Index

Page 1

	Year	Citations
GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates M. Asif Khan, J. Yang, W. Knap, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2000	103
Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates J.‐M. Chauveau, M. Teisseire, H. Kim‐Chauveau, Applied Physics Letters Materials SciencePhotoluminescenceEngineeringPhysicsTopological Heterostructures	2010	71
Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells Luc Beaur, T. Bretagnon, B. Gil, Physical Review B SemiconductorsQuantum ScienceIi-vi SemiconductorPhotoluminescenceEngineering	2011	68
Non-polar<i>a</i>-plane ZnMgO1/ZnO quantum wells grown by molecular beam epitaxy J.‐M. Chauveau, M. Laügt, P. Vennéguès, Semiconductor Science and Technology SemiconductorsMaterials ScienceStark EffectIi-vi SemiconductorEngineering	2008	64
Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy Dimitri Tainoff, M. Al-Khalfioui, C. Deparis, Applied Physics Letters Materials EngineeringOxide HeterostructuresMaterials ScienceSemiconductorsEngineering	2011	51
Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties Pierre‐Marie Coulon, M. Mexis, M. Teisseire, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringChemistryOptical Properties	2014	51
Spectroscopy of Excitons, Bound Excitons and Impurities in h-ZnO Epilayers C. Morhain, M. Teisseire, S. V�zian, physica status solidi (b) Localized Excited StateEngineeringOptoelectronic DevicesChemistryArsenic Impurity	2002	44
Imaging and counting threading dislocations in c-oriented epitaxial GaN layers Mario El Khoury, Aimeric Courville, B Poulet, Semiconductor Science and Technology Materials ScienceElectrical EngineeringEngineeringElectron MicroscopyPhysics	2013	36
Residual strain in nonpolar a-plane Zn1−xMgxO (&lt;x&lt;0.55) and its effect on the band structure of (Zn,Mg)O/ZnO quantum wells J.‐M. Chauveau, Jessica Vives, J. Zúñiga‐Pérez, Applied Physics Letters Zno QwsEngineeringO/zno Quantum WellsMg ContentSemiconductor Nanostructures	2008	32
Nucleation of sodium acetate trihydrate in thermal heat storage cycles J. Guion, M. Teisseire Solar Energy Materials ScienceChemical EngineeringEngineeringNucleationSodium Acetate Trihydrate	1991	27

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