T. Bretagnon

Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory

R. Bardoux, T. Guillet, Bernard Gil et al. · Physical Review B · 2008 · 69 citations · Full text

Engineering, Symmetry-based Theory, Gan/aln Quantum Dots +20

Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells

Luc Beaur, T. Bretagnon, B. Gil et al. · Physical Review B · 2011 · 68 citations

Semiconductors, Quantum Science, Ii-vi Semiconductor +15

Vacancy-type defects in crystalline and amorphous SiO2

S. Dannefaer, T. Bretagnon, D. Kerr · Journal of Applied Physics · 1993 · 66 citations

Materials Science, Fused Quartz, Engineering +12

Confined Excitons in GaN-AlGaN Quantum Wells

P. Bigenwald, Pierre Lefèbvre, T. Bretagnon et al. · physica status solidi (b) · 1999 · 63 citations · Full text

Wide-bandgap Semiconductor, Quantum Science, Engineering +13

Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities

Stéphane Faure, T. Guillet, Pierre Lefèbvre et al. · Physical Review B · 2008 · 55 citations · Full text

Semiconductors, Quantum Science, Electrical Engineering +15