Interface characterization of high-k dielectrics on Ge substrates

Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

Chi On Chui, Shriram Ramanathan, B. B. Triplett et al. · IEEE Electron Device Letters · 2002 · 332 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Hf O 2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

A. Dimoulas, G. Mavrou, G. Vellianitis et al. · Applied Physics Letters · 2005 · 151 citations

Oxide Heterostructures, Semiconductor Technology, Electrical Engineering +13

The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

Journal of Applied Physics · 2005 · 148 citations · Full text

High-k Dielectric Oxides, Nitrogen Postdeposition Anneal, Engineering +17

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Nan Wu, Qingchun Zhang, Chunxiang Zhu et al. · Applied Physics Letters · 2004 · 143 citations

Engineering, Ge Substrate, Metal-oxide-semiconductor Capacitors +22

Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge

Jindi Chen, N.A. Bojarczuk, Huiling Shang et al. · IEEE Transactions on Electron Devices · 2004 · 127 citations

Materials Science, Gate Dielectrics, Electrical Engineering +10