High resolution X-ray diffraction and X-ray topography study of GaN on sapphire

Analysis of Bi-Metal Thermostats

S. Timoshenko · Journal of the Optical Society of America · 1925 · 2.4K citations

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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

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Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 825 citations

Materials Science, Dislocation Densities, Epitaxial Growth +12

Elastic constants of gallium nitride

A. Polian, M. Grimsditch, I. Grzegory · Journal of Applied Physics · 1996 · 615 citations

Materials Science, Engineering, Physics +11

Emerging gallium nitride based devices

S. Noor Mohammad, A. Salvador, H. Morkoç̌ · Proceedings of the IEEE · 1995 · 610 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14