Applied Physics Letters · 1997 · 95 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor MaterialsThin FilmsDopingOptical Properties Of SemiconductorsSemiconductor DefectsSemiconductor PhysicsSemiconductor Thin FilmsWide Band Gap SemiconductorsDoping In Thin FilmsEpitaxial Thin FilmsGallium NitridePhotoconductivityPhotoluminescencePhotoluminescence SpectroscopyPhoton EnergySemiconductor Characterization
Persistent photoconductivity has been observed in n-type GaN:Si. The effect is seen at room temperature in both nonoptimally grown films as well as in device quality channel layers. The relaxation dynamics are found to agree with a stretched exponential model of recovery. A comparison between different samples, based upon stretched exponential parameters, Hall measurements, and photoluminescence data is made. The data suggest that the cause of persistent photoconductivity is the same among the different samples and that there is a transition in the relaxation dynamics between room temperature and 130 °C.
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