H. J. Queisser - Concepedia

Author

H. J. Queisser

Max Planck Institute for Solid State Research

Also Known As

H J Queisser, H QUEISSER, H. -J. Queisser, H. J. Queisser, H. Queisser, H.-J. Queisser, H.J Queisser, H.J. QUEISSER, H.J. Queisser, H.‐J. Queisser

179

Publications

19.4K

Citations

H-Index

Concepts

All Affiliations

Max Planck Institute for Solid State Research Max Planck Society

About

H. J. Queisser is an author at Max Planck Institute for Solid State Research specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	38	82	5.5K
2	Applied Physics	37	78	5.3K
3	Natural Sciences	7	7	803
4	Health Sciences	1	1	53
5	Medicine	1	1	45

H. J. Queisser

Publications

18.2K

Citations

H-Index

Page 1

	Year	Citations
Detailed Balance Limit of Efficiency of<i>p-n</i>Junction Solar Cells W. Shockley, H. J. Queisser Journal of Applied Physics	1961	12.6K
Electron scattering by ionized impurities in semiconductors Dipankar Chattopadhyay, H. J. Queisser Reviews of Modern Physics SemiconductorsElectrical EngineeringElectron ScatteringEngineeringPhysics	1981	569
Defects in Semiconductors: Some Fatal, Some Vital H. J. Queisser, Eugene E. Haller Science SemiconductorsMaterials ScienceElectrical EngineeringIi-vi SemiconductorEngineering	1998	520
Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells Sabine Kolodinski, J.H. Werner, T. Wittchen, Applied Physics Letters SemiconductorsPhotonicsQuantum ScienceUltraviolet RadiationEngineering	1993	313
Novel optimization principles and efficiency limits for semiconductor solar cells J.H. Werner, Sabine Kolodinski, H. J. Queisser Physical Review Letters EngineeringEnergy EfficiencyEnergy ConversionOrganic Solar CellPhotovoltaic System	1994	226
Decay kinetics of persistent photoconductivity in semiconductors H. J. Queisser, D. E. Theodorou Physical review. B, Condensed matter SemiconductorsDecay KineticsWide-bandgap SemiconductorEngineeringPhysics	1986	221
Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxy Jiang De-Sheng, Y. Makita, K. Ploog, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesElectrical Properties	1982	210
Slip Patterns on Boron-Doped Silicon Surfaces H. J. Queisser Journal of Applied Physics Materials ScienceCrystalline SymmetriesEngineeringPhysicsSurface Science	1961	162
Hall-Effect Analysis of Persistent Photocurrents in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-GaAs Layers H. J. Queisser, D. E. Theodorou Physical Review Letters Electrical EngineeringEngineeringPhysicsOptical PropertiesCompound Semiconductor	1979	146
Solar cell efficiency and carrier multiplication in Si1−xGex alloys Martin Wolf, Rolf Brendel, J.H. Werner, Journal of Applied Physics EngineeringPhotovoltaic DevicesOptoelectronic DevicesSilicon On InsulatorPhotovoltaics	1998	143

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