Shallow trench isolation double-diobe electrostatic discharge circuit and interaction with DRAM output circuitry

Kelvin probe force microscopy

M. Nonnenmacher, M. O’Boyle, H. K. Wickramasinghe · Applied Physics Letters · 1991 · 2.3K citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of junction curvature on breakdown voltage in semiconductors

Simon M. Sze, G. Gibbons · Solid-State Electronics · 1966 · 263 citations

Engineering, Electrical Engineering, Materials Science +14

A 50-ns 16-Mb DRAM with a 10-ns data rate and on-chip ECC

H.L. Kalter, C.H. Stapper, J. Barth et al. · IEEE Journal of Solid-State Circuits · 1990 · 114 citations

Engineering, Computer Engineering, Electrical Engineering +16

2010 VLSI technology symposium

2010 · 83 citations

Engineering, Computer Engineering, Electrical Engineering +12

Scaling, optimization and design considerations of electrostatic discharge protection circuits in CMOS technology

Steven H. Voldman, V. Gross · Journal of Electrostatics · 1994 · 60 citations

Engineering, Computer Engineering, Electrical Engineering +16