The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures

AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

I. P. Smorchkova, L. Chen, Thomas E. Mates et al. · Journal of Applied Physics · 2001 · 323 citations

Materials Science, Semiconductors, Aluminium Nitride +12

Piezoelectric charge densities in AlGaN/GaN HFETs

P.M. Asbeck, Edward T. Yu, S. S. Lau et al. · Electronics Letters · 1997 · 275 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +9

Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures

S. Heikman, S. Keller, Yuan Wu et al. · Journal of Applied Physics · 2003 · 239 citations

Materials Science, Layer Thickness, Electrical Engineering +11

Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor

Yifei Zhang, Jasprit Singh · Journal of Applied Physics · 1999 · 184 citations · Full text

Semiconductors, Charge Control, Electrical Engineering +13

AlGaN/GaN HEMTs grown on SiC substrates

S.C. Binari, Joan M. Redwing, G. Kelner et al. · Electronics Letters · 1997 · 160 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8