Calixarene Electron Beam Resist for Nano-Lithography

Abstract

New electron beam (EB) resists made of calixarene resists are introduced. Typical sensitivities of calixarene resists range from 700 µ C/cm 2 to 7 mC/cm 2 . High-density dot arrays with 15 nm diameter constructed using calixarene resist were easily delineated using a point EB lithography system. Our results suggest that the resolution limit of calixarene resists is dominated by a development process such as adhesion to a substrate rather than by the EB profile. Calixarene resists are resistant to etching by halide plasma. We also demonstrated nanoscale devices processed by using calixarene resists. Calixarene resists are promising materials for nanofabrication.