High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys

Su‐Huai Wei, Alex Zunger · Physical Review Letters · 1996 · 548 citations

Natural Sciences, Materials Science, Physics +15

InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

S. R. Kurtz, Andrew A. Allerman, E. D. Jones et al. · Applied Physics Letters · 1999 · 537 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Bowing parameter of the band-gap energy of GaNxAs1−x

Wengang Bi, C. W. Tu · Applied Physics Letters · 1997 · 403 citations

Natural Sciences, Materials Science, Physics +17

Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

I. A. Buyanova, Weimin Chen, J. P. Bergman et al. · Applied Physics Letters · 1999 · 262 citations

Engineering, Materials Engineering, Materials Science +17

Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments

E. V. K. Rao, A. Ougazzaden, Y. Le Bellégo et al. · Applied Physics Letters · 1998 · 174 citations

Natural Sciences, Materials Engineering, Materials Science +17