T. Hakkarainen

Catalyst-free growth of In(As)P nanowires on silicon

M. Mattila, T. Hakkarainen, Harri Lipsanen et al. · Applied Physics Letters · 2006 · 96 citations · Full text

Materials Science, Engineering, Nanowire Growth +13

High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

Juha Toivonen, T. Hakkarainen, M. Sopanen et al. · Journal of Crystal Growth · 2000 · 54 citations

Electrical Engineering, Engineering, Applied Physics +3

Enhanced luminescence from catalyst-free grown InP nanowires

M. Mattila, T. Hakkarainen, Harri Lipsanen et al. · Applied Physics Letters · 2007 · 47 citations · Full text

Materials Science, Photoluminescence, As-grown Nanowires +10

GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

Markus Bosund, P. Mattila, Abuduwayiti Aierken et al. · Applied Surface Science · 2010 · 47 citations

Compound Semiconductor, Applied Physics, Gaas Surface Passivation

Effect of substrate orientation on the catalyst-free growth of InP nanowires

M. Mattila, T. Hakkarainen, Hua Jiang et al. · Nanotechnology · 2007 · 38 citations

Materials Science, Engineering, Nanowire Growth +12