Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.5K citations · Full text

High-brightness Ingan Blue, Engineering, Green Leds +16

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 825 citations

Materials Science, Dislocation Densities, Epitaxial Growth +12

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

S. J. Rosner, Elizabeth C. Carr, M. J. Ludowise et al. · Applied Physics Letters · 1997 · 528 citations

Materials Science, Luminescence Intensity, Wide-bandgap Semiconductor +15

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Tomoya Sugahara, Hisao Satô, Maosheng Hao et al. · Japanese Journal of Applied Physics · 1998 · 466 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Photoluminescence +14

Three-dimensional imaging by a microscope

N. Streibl · Journal of the Optical Society of America A · 1985 · 402 citations

Engineering, Microscopy, Biomedical Engineering +22