Kang Jea Lee

Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer

Kang Jea Lee, Eun Ho Shin, Kee Young Lim · Applied Physics Letters · 2004 · 61 citations

Materials Engineering, Materials Science, Dislocation Density +13

Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode

Tae Hoon Seo, Kang Jea Lee, Tae Su Oh et al. · Applied Physics Letters · 2011 · 48 citations · Full text

Engineering, Graphene Nanomeshes, Nanoelectronics +17

Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate

Ki Soo Kim, Chang Seok Oh, Kang Jea Lee et al. · Journal of Applied Physics · 1999 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Epitaxial Growth +13

Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode

Tae Hoon Seo, Kang Jea Lee, Ah Hyun Park et al. · Optics Express · 2011 · 38 citations · Full text

White Oled, Electrical Engineering, Conventional Tcse +14

Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster

Tae Su Oh, Hyun Jeong, Yong Seok Lee et al. · Applied Physics Letters · 2009 · 36 citations

Materials Science, Plasmonics, Ingan/gan Multiquantum-wells Photoluminescence +11