Kee Young Lim

Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer

Kang Jea Lee, Eun Ho Shin, Kee Young Lim · Applied Physics Letters · 2004 · 61 citations

Materials Engineering, Materials Science, Dislocation Density +13

Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate

Ki Soo Kim, Chang Seok Oh, Kang Jea Lee et al. · Journal of Applied Physics · 1999 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Epitaxial Growth +13

Al concentration control of epitaxial AlGaN alloys and interface control of GaN/AlGaN quantum well structures

Sung Chul Choi, Jong-Hee Kim, Ji Youn Choi et al. · Journal of Applied Physics · 2000 · 40 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Growth and properties of Al-rich In_<i>x</i>Al_1−<i>x</i>N ternary alloy grown on GaN template by metalorganic chemical vapour deposition

Tae Su Oh, Jong Ock Kim, Hyun Jeong et al. · Journal of Physics D Applied Physics · 2008 · 19 citations

Materials Engineering, Materials Science, Gan Template +11

Mechanistic Study and Characterization of 3C-SiC(100) Grown on Si(100)

Kwang Chul Kim, Chan Il Park, Jae Il Roh et al. · Journal of The Electrochemical Society · 2001 · 18 citations · Full text

Materials Science, Materials Engineering, Engineering +13