Arsenic pressure dependence of incorporation diffusion length on (001) and (110) surfaces and inter-surface diffusion in MBE of GaAs

Stimulated emission in semiconductor quantum wire heterostructures

E. Kapon, D. M. Hwang, R. Bhat · Physical Review Letters · 1989 · 638 citations

Engineering, Electrical Engineering, Physics +17

Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

C. T. Foxon, B.A. Joyce · Surface Science · 1975 · 396 citations

Natural Sciences, Materials Engineering, Materials Science +14

Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffraction

M. Hata, Toshiro Isu, A. Watanabe et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 160 citations

Natural Sciences, Materials Engineering, Materials Science +17

Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates

S. Koshiba, H. Noge, Hidefumi Akiyama et al. · Applied Physics Letters · 1994 · 151 citations

Engineering, Materials Engineering, Materials Science +17

New GaAs quantum wires on {111}B facets by selective MOCVD

Takashi Fukui, Shinji Ando · Electronics Letters · 1989 · 88 citations

Natural Sciences, Materials Science, Physics +17