Toshiro Isu

Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffraction

M. Hata, Toshiro Isu, A. Watanabe et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 160 citations

Patterned Surfaces, Growth Rates, Engineering +21

Interband transitions of thin-layer GaAs/AlAs superlattices

M. Garriga, M. Cardona, N. E. Christensen et al. · Physical review. B, Condensed matter · 1987 · 87 citations

Optical Materials, Engineering, Confinement Effect +16

Large Four-Wave Mixing of Spatially Extended Excitonic States in Thin GaAs Layers

Hajime Ishihara, Kikuo Cho, Koichi Akiyama et al. · Physical Review Letters · 2002 · 76 citations

Thin Gaas Layers, Quantum Science, Photonics +14

Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffraction

M. Hata, Toshiro Isu, A. Watanabe et al. · Applied Physics Letters · 1990 · 75 citations

Materials Science, Semiconductors, Microscopic Distribution +15

Ultrathin-layer (AlAs) m (GaAs) m superlattices withm = 1,2,3 grown by molecular beam epitaxy

Toshiro Isu, De Sheng Jiang, K. Ploog · Applied Physics A · 1987 · 66 citations

Materials Science, Engineering, Applied Physics +6