Applied Physics Letters · 1998 · 46 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDielectricsMetal-semiconductor ContactsMetalsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesElectrical PropertiesGate Dielectric EngineeringGate DielectricsGate Oxide DegradationMetal GatesSemiconductor TechnologySilicon DioxideTungsten Deposits
A process has been described which can produce a midgap tungsten gate compatible with the current and future complementary metal–oxide–semiconductor technology. The tungsten was deposited directly onto a 3.0 nm SiO2 gate dielectric without measurable degradation of any of its electrical properties. The tungsten deposition process yields no reactive or corrosive by-products that affect the gate dielectric integrity. The tungsten film is found to be pure within the limits of several analytical techniques and the resistivity of the tungsten films was found to be within a factor of 2 of the bulk value.
2
CMOS scaling into the 21st century: 0.1 µm and beyond
Y. Taur, Y. J. Mii, D.J. Frank et al. · IBM Journal of Research and Development · 1995 · 113 citations
Engineering, Computer Engineering, Electrical Engineering +17