Scanning tunneling spectroscopy and first-principles investigation on GaAs(0 0 1)(2 × 6)-S surface formed by molecular beam epitaxy

Solution of Schrödinger’s equation for large systems

Michael P. Teter, Michael C. Payne, Douglas C. Allan · Physical review. B, Condensed matter · 1989 · 1.1K citations

Natural Sciences, Chemistry, Physics +14

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 722 citations

Engineering, Electrical Engineering, Materials Science +17

Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams

Nobuyuki Koguchi, Keiko Ishige · Japanese Journal of Applied Physics · 1993 · 231 citations

Natural Sciences, Materials Engineering, Materials Science +17

The Effect of (NH₄)₂S Treatment on the Interface Characteristics of GaAs MIS Structures

Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi · Japanese Journal of Applied Physics · 1988 · 216 citations

Engineering, Materials Engineering, Materials Science +16

Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs <i>p</i> <i>n</i> diodes

M. S. Carpenter, M. R. Melloch, Mark Lundstrom et al. · Applied Physics Letters · 1988 · 192 citations · Full text

Engineering, Electrical Engineering, Materials Science +17