Applied Physics Letters · 1989 · 28 citations · 13 references
PhotonicsOptical MaterialsEngineering300-μM-long Cavity LasersPhysicsReactive IonOptical PropertiesLaser ScienceApplied PhysicsLaser ApplicationsLaser MaterialPlasma EtchingGainasp/inp LasersPulsed Laser DepositionThreshold CurrentsOptoelectronicsHigh-power LasersEtched Mirrors
A reactive ion etching method is applied to fabricate mirrors of 1.5 μm GaInAsP/InP mass transport lasers using a mixture of ethane and hydrogen as an etchant. Threshold currents as low as 35 mA are achieved for the 300-μm-long cavity lasers with one etched and one cleaved facet. The differential quantum efficiencies of the lasers with one dry etched facet and both dry etched facets are 13 and 9.5%, respectively.
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Reactive ion etching of GaAs using a mixture of methane and hydrogen
Rebecca Cheung, S. Thoms, S.P. Beamont et al. · Electronics Letters · 1987 · 110 citations
Nanometric Scale, Engineering, Electron-beam Lithography +16
GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet
L.A. Coldren, Kenichi Iga, B.I. Miller et al. · Applied Physics Letters · 1980 · 104 citations
Reactive ion etching of III-V compounds using C <sub>2</sub> H <sub>6</sub> /H <sub>2</sub>
T. Matsui, Hiroshi Sugimoto, T. Ohishi et al. · Electronics Letters · 1988 · 37 citations