GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet

Abstract

We report the first use of reactive-ion etching (RIE) to form mirror facets on GaInAsP/Inp double-heterostructure (DH) lasers (λ∼1.3 μm). The RIE, performed with a Cl2:O2 gas mixture, provides vertical etched walls with no undercutting. Initial laser results demonstrate that quasi-single-mode operation and reasonable threshold currents are possible.