J. A. Rentschler

Microstructure, oxygen ordering and planar defects in the high-Tc superconductor YBa2Cu3O6.9

A. Ourmazd, J. A. Rentschler, J. C. H. Spence et al. · Nature · 1987 · 142 citations

Natural Sciences, Materials Science, Physics +13

Monolithic two-section GaInAsP/InP active-optical-resonator devices formed by reactive ion etching

L.A. Coldren, B.I. Miller, Kenichi Iga et al. · Applied Physics Letters · 1981 · 137 citations

Natural Sciences, Electrical Engineering, Materials Science +17

GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet

L.A. Coldren, Kenichi Iga, B.I. Miller et al. · Applied Physics Letters · 1980 · 105 citations

Engineering, Electrical Engineering, Materials Science +17

Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated optics

L.A. Coldren, K. Furuya, B.I. Miller et al. · IEEE Journal of Quantum Electronics · 1982 · 89 citations

Engineering, Electrical Engineering, Materials Science +17

Determination of the atomic configuration at semiconductor interfaces

A. Ourmazd, W. T. Tsang, J. A. Rentschler et al. · Applied Physics Letters · 1987 · 69 citations

Engineering, Materials Science, Physics +17