Concepedia

T. Ohishi

TO

Statistics

Publications

11

Citations

309

H-Index

11

Active since

1984

Affiliations

Mitsubishi Electric (Japan)(Current)

Kyoto University

T. Ohishi is an author at Mitsubishi Electric (Japan) specializing in materials science, engineering, and semiconductor devices.

Publications per year

1984–2006

11

Publications

11

Electrical properties of silicon nitride films plasma-deposited from SiF4, N2, and H2 source gases

Shizυo Fujita, T. Ohishi, Hideo Toyoshima et al. · Journal of Applied Physics · 1985 · 49 citations

, , +17

Reactive ion etching of III-V compounds using C <sub>2</sub> H <sub>6</sub> /H <sub>2</sub>

T. Matsui, Hiroshi Sugimoto, T. Ohishi et al. · Electronics Letters · 1988 · 37 citations

, , +16

1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

Teruhito Matsui, Kenichi Ohtsuka, Hiroshi Sugimoto et al. · Applied Physics Letters · 1990 · 34 citations

, , +17

Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride

Shizυo Fujita, Hideo Toyoshima, T. Ohishi et al. · Japanese Journal of Applied Physics · 1984 · 34 citations

, , +17

Plasma-Deposited Silicon Nitride Films from SiF<sub>2</sub> as Silicon Source

Shizυo Fujita, Hideo Toyoshima, T. Ohishi et al. · Japanese Journal of Applied Physics · 1984 · 31 citations

, , +17

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