Japanese Journal of Applied Physics · 1984 · 31 citations · 2 references
Natural SciencesMaterials EngineeringMaterials SciencePhysical ChemistrySemiconductor MaterialsSurface SciencePlasma SourcesPlasma Surface TreatmentSemiconductor Device MaterialsSemiconductor PhysicsSilicon MaterialsThin-film DepositionDeposition RateDeposition Rate EffectsNitride Thin FilmsNitrides DepositionNitrides Thin FilmsPlasma NitridingReactivitySilicon Nitride
SiF 2 gas is used instead of SiF 4 as a reactant source for the plasma-deposition of silicon nitride. As compared with the reaction from the SiF 4 –N 2 –H 2 gas mixture, (i) the deposition rate is higher at the same N/Si ratio, (ii) more nitrogen, less fluorine and less oxygen are incorporated in the film, and (iii) the film can be deposited without H 2 gas. These results can be attributed to higher reactivity of the SiF 2 gas.
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