Kenichi Ohtsuka

Characteristics of 4H–SiC MOS interface annealed in N2O

Keiko Fujihira, Yoichiro Tarui, Masayuki Imaizumi et al. · Solid-State Electronics · 2005 · 76 citations

Oxide Heterostructures, Semiconductor Technology, Electrical Engineering +5

Surface reaction kinetics of gas-phase diamond growth

Eiichi Kondoh, Tomohiro Ohta, Tohru Mitomo et al. · Journal of Applied Physics · 1993 · 66 citations

Materials Science, Diamond-like Carbon, Chemical Engineering +12

1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

Teruhito Matsui, Kenichi Ohtsuka, Hiroshi Sugimoto et al. · Applied Physics Letters · 1990 · 34 citations

Optical Materials, Engineering, Semiconductor Lasers +12

Preparation of SnS Films by Sulfurization of Sn Sheet

Mutsumi Sugiyama, Keisuke Miyauchi, Takehiro Minemura et al. · Japanese Journal of Applied Physics · 2008 · 29 citations

Optical Materials, Engineering, Tin Sulfide +19

GaInAsP/InP lasers with etched mirrors by reactive ion etching using a mixture of ethane and hydrogen

Teruhito Matsui, Hiroshi Sugimoto, T. Ohishi et al. · Applied Physics Letters · 1989 · 28 citations

Photonics, Optical Materials, Engineering +15