Electronics Letters · 1988 · 37 citations · 6 references
Reactive ion etching of InP, GaInAs and GaAs using a mixture of ethane and hydrogen, C2H6/H2, is demonstrated for the first time. It has been found that by choosing optimum etching parameters we can obtain excellent vertical sidewalls as well as very smooth surfaces, keeping the etching rate at a convenient value of 20–60 nm/min.
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Reactive ion etching of GaAs using a mixture of methane and hydrogen
Rebecca Cheung, S. Thoms, S.P. Beamont et al. · Electronics Letters · 1987 · 110 citations
Nanometric Scale, Engineering, Electron-beam Lithography +16
GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet
L.A. Coldren, Kenichi Iga, B.I. Miller et al. · Applied Physics Letters · 1980 · 104 citations