Crystallization of amorphous Ge films induced by semiconductor diode laser annealing

Surface Energy of Germanium and Silicon

R. J. Jaccodine · Journal of The Electrochemical Society · 1963 · 542 citations

Natural Sciences, Materials Science, Physics +17

XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

Toshiyuki Sameshima, M. Sekiya · IEEE Electron Device Letters · 1986 · 444 citations

Engineering, Electrical Engineering, Materials Science +16

XeCl Excimer Laser Annealing used in the Fabrication of Poly-Si TFTs

Toshiyuki Sameshima, M. Sekiya, S. Usui · 1985 · 354 citations

Engineering, Materials Engineering, Materials Science +13

Dielectric constant of germanium and silicon as a function of volume

M. Cardona, William Paul, Harvey Brooks · Journal of Physics and Chemistry of Solids · 1959 · 128 citations

Natural Sciences, Materials Science, Physics +12

Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

Tatsuro Maeda, Keiji Ikeda, Shu Nakaharai et al. · Thin Solid Films · 2005 · 67 citations

Engineering, Electrical Engineering, Materials Science +14