IEEE Transactions on Electron Devices · 2014 · 17 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingDevice SimulationDopingMetal-oxide-semiconductor Field-effect TransistorsNanowiresSemiconductor PhysicsCarrier Transport ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingNanowire DevicesNanowire Field-effect TransistorsNanowire TransistorsSemiconductor Device ModelingSemiconductor Nanowires
We report a novel method to solve the nonlinear 1-D Poisson's equation for the gate-all-around (GAA) nanowire MOSFETs with nonuniform doping profiles. An algebraic relation between the electric field and potential is identified to develop a surface-field-based compact model. Drain current is derived from the oxide-interface boundary condition to avoid the complicated surface-potential approach. As verified by the TCAD simulations, this analytic model is capable of continuously covering all operating regions of GAA nanowire MOSFETs with slowly varying doping profiles.
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Continuous Analytic I–V Model for Surrounding-Gate MOSFETs
David Jiménez, J. Suñé, Lluı́s F. Marsal et al. · IEEE Electron Device Letters · 2004 · 280 citations
Engineering, Electrical Engineering, Electronic Materials +16