2006 · 70 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsNanotechnologySemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingDevice SimulationNanoelectronicsNanotubesCarbon Nanotube ElectronicsCarbon Nanotube Field-effect TransistorsCompact Model Parameter ExtractionCompact ModelingContact ResistanceElectric Circuit ModelsThreshold VoltageThreshold Voltage Modeling
This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact resistance influences only the current level. From a designer's point of view, taking care of the parameter variations and in particular of the nanotube diameters is crucial to achieve reliable circuits
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High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
Ali Javey, Hyoungsub Kim, Markus Brink et al. · Nature Materials · 2002 · 969 citations
Theory of ballistic nanotransistors
Anisur Rahman, Jing Guo, Supriyo Datta et al. · IEEE Transactions on Electron Devices · 2003 · 773 citations