Applied Physics Letters · 1984 · 31 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationIntegrated Circuit DesignIntegrated Circuit DevicesMetal-oxide-semiconductor Field-effect TransistorsPiezoelectric MaterialsSemiconductor Device MaterialsBand AlignmentMetal-semiconductor Field-effect TransistorsPiezoelectric EffectSubstrate Orientation Effects
In order to assess the orientation dependence of device uniformity in GaAs integrated circuits, metal-semiconductor field-effect transistors (MESFET’s) were fabricated along different crystal orientations on a 3-in. (100) substrate and compared with one another. Measurements indicated that the characteristics of FET’s oriented along [011] and [011̄] directions have strong dependence upon their radial positions on the wafer. However, FET’s oriented in [001] and [010] directions do not display such dependence and have better device uniformity. The orientation effect on the radial dependence of the FET device characteristics can be attributed to the piezoelectric effect.
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