Applied Physics Letters · 1980 · 51 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsField-effect Transistor Transfer CharacteristicsLateral Dopant DiffusionMetal-semiconductor Field-effect TransistorsPreferential DiffusionSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky Barriers
Orientation effects on planar GaAs Schottky barrier field effect transistors (MESFET’s) have been found. Device characteristics of FET’s parallel to both [110] directions and both [100] directions are compared. Dependence of the characteristics on gate length has been measured for FET’s oriented in two perpendicular [110] directions. Preferential lateral diffusion is proposed to be the reason underlying these phenomena.
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The prospects for ultrahigh-speed VLSI GaAs digital logic
R.C. Eden, B.M. Welch, R. Zucca et al. · IEEE Journal of Solid-State Circuits · 1979 · 54 citations
Engineering, Computer Engineering, Electrical Engineering +17